Boost Converter: Design, Circuit, Equations & More - Power …
2018年4月20日 · Boost Converter Design. In most any power supply schematic, the inputs are on the left and power flow is towards the load on the right. A boost is a little more than a backwards buck, though, so for a moment, let’s imagine that V-in and V-out in this schematic were reversed. Now, it would change D1 and Q1. The boost is a buck going backwards.
Understanding the EV Powertrain - Power Electronics News
2023年4月13日 · A typical EV powertrain consists of a battery pack, inverters for power transfer and electric motor (s) through a final reduction drive. For hybrid vehicles and plug-in hybrid vehicles, there are additional components in the powertrain, like an ICE, dedicated transmission and exhaust system. The main components of an EV powertrain are:
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Overview of Motor Control in Electric Vehicles
2023年4月20日 · The Motor Control Unit (MCU) is an electronic module that interfaces between the batteries (DC power sources) and the motor (AC or BLDC). Its main task is to control the EV’s speed and acceleration based on throttle input. The main activities performed by an MCU are the following: Control the motor torque and speed.
Power Supply Design Notes: How to Measure Ripple
2020年10月10日 · Select the “AC voltage” mode by turning the tester knob. The meter will only measure the AC component of the signal, the ripple voltage, if present. The display shows the measured value of the ripple voltage amplitude. If it shows the value 0.00 mV it means that, most likely, the ripple is absent.
Inrush Current: Causes, Limiters and Protection Circuits
2018年8月30日 · During power-on, a high inrush current can occur because the power supply’s link capacitor functions to dampen ripples in the output current. This capacitor acts like a short, causing an inrush of current. The inrush lasts until the capacitor is charged. Length of the inrush current depends upon the power supply and link capacitor.
Comparing N-Channel and P-Channel MOSFETs: Which is best for …
2024年5月28日 · To achieve a similar on-state resistance R DS(on) as n-channel MOSFETs, p-channel MOSFETs require a two to three-times larger die size. As a result, in more high-current applications, where low conduction losses are critical, the large die p-channel MOSFETs with very low R DS(on) are not the optimal choice.. While the p-channel device’s larger chip size offers …
Silicon Carbide (SiC): 10 Things to Know - Power Electronics News
2021年3月17日 · Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability. The wide band gap and high thermal stability allow SiC devices to be used at junction ...
GaN vs. SiC Transistors - Power Electronics News
2021年11月16日 · GaN vs. SiC Transistors. November 16, 2021 Onsemi. Advertisement. For decades, silicon has dominated the transistor world, but that has been gradually changing. Compound semiconductors made of two or three materials have been developed and offer unique benefits and superior characteristics. For example, compound semiconductors gave us the …
USB-PD 3.2: Key Updates and Impact - Power Electronics News
2024年5月29日 · AVS requirements and corrosion mitigation are the major updates to the USB-C and USB-PD specifications. AVS is mandatory for certain power delivery ranges (27–100 W) in USB-PD 3.2. This capability allows the charger to adjust the voltage output to better match the needs of the device, greatly improving the charging efficiency.